?004 fairchild semiconductor corporation j une 2004 RMWL26001 rev. d RMWL26001 RMWL26001 21?6.5 ghz low noise amplifier mmic general description the RMWL26001 is a 4-stage gaas mmic amplifier designed as a 21 to 26.5 ghz low noise amplifier for use in point to point and point to multi-point radios, and various communications applications. in conjunction with other fairchild rf components amplifiers, multipliers and mixers it forms part of a complete 26 ghz transmit/receive chipset. the RMWL26001 utilizes our 0.25? power phemt process and is sufficiently versatile to serve in a variety of low noise amplifier applications. features ? mil substrate small-signal gain 21db (typ.) 2.9db noise figure (typ.) chip size 3.0mm x 1.25mm absolute ratings symbol parameter ratings units vd positive dc voltage (+4v typical) +6 v vg negative dc voltage -2 v vdg simultaneous (vd?g) 8 v i d p ositive dc current 100 ma p in rf input power (from 50 ? source) +8 dbm t c operating baseplate temperature -30 to +85 ? t stg storage temperature range -55 to +125 ? r jc thermal resistance (channel to backside) 170 ?/w device
?004 fairchild semiconductor corporation RMWL26001 rev. d RMWL26001 electrical characteristics (at 25?), 50 ? system, vd = +4v, quiescent current (idg) = 65 ma note: 1: typical range of negative gate voltage is -0.8 to -0.2 v to set typical idq of 65 ma application information caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325? for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf and dc ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. figure 1. functional block diagram p arameter min typ max units f requency range 21 26.5 ghz gate supply voltage 1 (vg) 0.5 v gain at pin = -15dbm (21?4ghz) 20 22 26 db gain at pin = -15dbm (21?6.5ghz) 20 21 26 db gainvariation vs freq. (21?6.5ghz) 2.8 db gain at 1 dbm compression (21?6.5ghz) 20 db po w er output at 1db compression 10 dbm drain current at pin = -15dbm 65 ma drain current at 1db compression 80 ma input return loss (pin = -15dbm) 12 db output return loss (pin = -15dbm) 12 db noise figure 2.9 4.0 db oip3 22 dbm drain supply vd1 drain supply vd3 drain supply vd4 drain supply vd2 mmic chip rf out rf in ground (back of the chip) gate supply vg
?004 fairchild semiconductor corporation RMWL26001 rev. d RMWL26001 figure 2. chip layout and bond pad locations (chip size is 3.0mm x 1.25mm x 100?. back of chip is rf and dc ground) figure 3. recommended application schematic circuit diagram 0.0 0.621 1.870 2.223 2.721 0.451 0.301 1.154 1.701 2.690 0.600 0.0 0.0 dimensions in mm drain supply vd = +4v ground (back of chip) gate supply vg l = bond wire inductance l l l l mmic chip rf in rf out l l l l l l l 100pf 100pf 100pf 100pf 100pf 100pf 10,000pf 10,000pf 100pf l l l l
?004 fairchild semiconductor corporation RMWL26001 rev. d RMWL26001 figure 4. recommended assembly diagram 5 mil thick alumina 50 ? 5 mil thick alumina 50 ? die-attach 80au/20sn vdd (positive) vg (negative) 2 mil gap note: use 0.003" by 0.0005" gold ribbon for bonding. rf input and output bonds should be less than 0.015" long with stress relief. l < 0.015" (4 places) rf output rf input 10,000pf 10,000pf 100pf 100pf 100pf 100pf 100pf 100pf recommended procedure for biasing and operation caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier chip. the following sequence of steps must be followed to properly test the amplifier: step 1: turn off rf input power. step 2: connect the dc supply grounds to the grounds of the chip carrier. slowly apply negative gate bias supply voltage of -1.5v to vg. step 3: slowly apply positive drain bias supply voltage of +4v to vd. step 4: adjust gate bias voltage to set the quiescent current of idq = 65ma. step 5: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. step 6: follow turn-off sequence of: (i) turn off rf input power, (ii) turn down and off drain voltage (vd), (iii) turn down and off gate bias voltage (vg).
?004 fairchild semiconductor corporation RMWL26001 rev. d RMWL26001 typical characteristics 0 5 10 15 20 25 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 frequency (ghz) frequency (ghz) s 21 (db) -25 -20 -15 -10 -5 0 s 11 s 22 (db) s 21 s 11 s 22 0 5 10 15 20 25 051015 20 25 30 s 21 (db ) -25 -20 -15 -10 -5 0 s 11 s 22 (db ) s 21 s 11 s 22 RMWL26001 26ghz low noise amplifier, typical performance on-wafer measurements, i dq = 65ma, v dd = 4.0v RMWL26001 26ghz low noise amplifier, typical performance on-wafer measurements, i dq = 65ma, v dd = 4.0v
?004 fairchild semiconductor corporation RMWL26001 rev. d RMWL26001 typical characteristics (continued) 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 20.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 27 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11 11.25 11.5 11.75 12 output power at p1db (dbm) noise figure (db) gain at p1db (dbm) 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 frequency (ghz) frequency (ghz) RMWL26001 26ghz low noise amplifier, typical performance on-wafer measurements, i dq = 65ma, v dd = 4.0v RMWL26001 26ghz low noise amplifier, typical noise figure on-wafer measurements, i dq = 65ma, v dd = 4.0v output power gain (p1db)
?004 fairchild semiconductor corporation RMWL26001 rev. d RMWL26001 typical characteristics (continued) 0 5 10 15 20 25 18 19 20 21 22 23 2 25 26 27 28 29 30 s 21 (d b) -25 -20 -15 -1 0 -5 0 s 11 s 22 (db ) s 21 s 11 s 22 RMWL26001 26ghz low noise amplifier, typical performance on-wafer measurements, i dq = 65ma, v dd = 4.0v
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